副校長 | 張翼博士
- Y. L. Lai, E. Y. Chang, C. Y. Chang, T. K. Chen, T. H. Liu, S. P. Wang, T. H. Chen, C. T. Lee, “5mm high-power-density dual-delta-doped power HEMT’s for 3 V L-band applications,” IEEE Electron Device Lett., vol.17, no. 5, pp. 229-231, May 1996.
- C. Y. Chen, E. Y. Chang, L. Chang, and S. H. Chen, “Backside copper metallization of GaAs MESFET’s using TaN as the diffusion barrier”, IEEE Trans. Electron Devices, vol.48, no.6, pp.1033-1036,June 2001.
- Y. C. Lin, H.Yamaguchi, E. Y. Chang, Y. C. Hsieh, M. Ueki, Y. Hirayama, C. Y. Chang, “Growth of very high mobility AlGaSb/InAs High-Electron-Mobility transistor structure on Si substrate for high-speed electronic applications”, Appl. Phys. Lett., vol. 90, issue 2, pp. 0235091-1–0235091-3, Nov. 2007.
- C. Y. Chang, H. T. Hsu, E. Y. Chang, C. I. Kuo, M. Radosavljevic, Y. Miyamoto, and G. W. Huang, “Investigation of Impact Ionization in InAs-Channel HEMT for Speed and Low Power Applications” IEEE Electron Device Lett., vol. 28, no. 10, pp.856 – 858,Oct. 2007.
- C. I Kuo, H. T. Hsu, E. Y. Chang, C. Y. Chang, Y. Miyamoto, S. Datta, M.Radosavljevic, G. W. Huang, and C. T. Lee, “RF and Logic Performance Improvement of In0.7Ga0.3As /InAs/In0.7Ga0.3As Composite Channel HEMT Using Gate Sinking Technology, ”IEEE Electron Device Lett., vol. 29, no. 4, pp. 290-293, April 2008.
- E. Y. Chang, C. I. Kuo, H. T. Hsu, C. Y. Chiang, and Y. Miyamoto, “InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications,” Appl. Phys. Express, vol.6,no.3, pp.03400-1–03400-3, Feb. 2013.
- H. D. Trinh, Y. C. Lin, E. Y. Chang, C. T. Lee, S.Y. Wang, H. Q. Nguyen, Y. S. Chiu, Q. H. Luc, H.C. Chang, C. H. Lin, S. Jang, and C. H. Diaz, “Electrical Characteristics of Al2O3/InSb MOSCAPs and the Effect of Postdeposition Annealing Temperature,” IEEE Trans. Electron Devices, vol. 60, no. 5,pp. 1555 – 1559,May 2013.
- Y. C. Lin, H. D. Trinh, T. W. Chuang, H. Iwai, K. Kakushima, P. Ahmet, C. H. Lin, C. H. Diaz, H. C. Chang, S. M. Jang, and E. Y. Chang. ” Electrical Characterization and Materials Stability Analysis of La2O3/HfO2 Composite Oxides on n-In0.53Ga0.47As MOS Capacitors with Different Annealing”, IEEE Electron Device Lett., vol. 34, no. 10, pp. 1229 – 1231, Oct. 2013.
- T. E. Hsieh, E. Y. Chang, Y. Z. Song, Y. C. Lin, H.C. Wang, S. C. Liu, S. Salahuddin, and C. C. Hu ” Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer” IEEE Electron Device Lett.,vol. 35, no 7,pp.732 – 734,July2014.
- S. C. Liu, B. Y. Chen, Y. C. Lin, T. E. Hsieh, H. C. Wang, and E. Y. Chang, “GaN MIS-HEMTs With Nitrogen Passivation for Power Device Applications“ IEEE Electron Device Lett., vol. 35, no. 10, pp.1001 – 1003, Oct. 2014.